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Interfacial dead-layer effects in Hf-silicate films with Pt or RuO2 gates
Hyo Kyeom Kim1, Il-Hyuk Yu, Jae Ho Lee
1Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Seoul, Korea.
ACS Applied Materials & Interfaces
|June 29, 2013
Summary
Interfacial dead-layer effects in Hf-silicate films depend on dielectric constant (k). Increasing silicon content suppresses this effect, suggesting an optimal high-k gate dielectric structure for improved performance.
Area of Science:
- Materials Science
- Semiconductor Physics
- Electrical Engineering
Background:
- Interfacial dead-layer (DL) effects are critical in gate dielectric performance.
- Understanding these effects is crucial for advanced semiconductor devices.
Purpose of the Study:
- To investigate the interfacial dead-layer (DL) effects in Hf-silicate films.
- To determine the influence of dielectric constant (k) and silicon content on DL effects.
- To identify an optimal high-k gate dielectric structure.
Main Methods:
- Controlled variation of silicon content in Hf-silicate films.
- Tuning the dielectric constant (k) of the Hf-silicate layer.
- Examination of interfacial dead-layer effects at Hf-silicate/Pt or RuO2 interfaces.
Main Results:
- Dead-layer effect strongly depends on the k value of the Hf-silicate layer.
- DL effect is suppressed with increased silicon content (∼80%, k ≈ 6).
- Optimal silicon content aligns with Fermi level pinning-free composition.
Conclusions:
- The optimal high-k gate dielectric structure involves a higher-k HfO2 layer capped with a lower-k layer (k ≈ 6) of minimal thickness (∼1 nm).
- This structure minimizes dead-layer effects for enhanced dielectric performance.
