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Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
Diode: Reverse bias01:14

Diode: Reverse bias

A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...

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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Design issues for lateral double-diffused metal-oxide-semiconductor with higher breakdown voltage.

Kunsik Sung1, Taeyoung Won

  • 1Department of Electrical Engineering, School of Engineering, Inha University, Incheon 402-751, Korea.

Journal of Nanoscience and Nanotechnology
|July 18, 2013
PubMed
Summary

A novel High-Side nLDMOSFET achieves over 100 V breakdown voltage with low on-resistance. This advanced semiconductor device utilizes a specific structural design for enhanced performance in power electronics applications.

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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Area of Science:

  • Electrical Engineering
  • Semiconductor Device Physics

Background:

  • High-voltage semiconductor devices are crucial for power electronics.
  • Conventional Lateral Double-Diffused Metal-Oxide-Semiconductor Field-Effect Transistors (LDMOSFETs) face limitations in achieving high breakdown voltage and low on-resistance simultaneously within standard thermal budgets.
  • Optimizing device structures is key to overcoming these limitations.

Purpose of the Study:

  • To introduce and analyze a new High-Side nLDMOSFET design.
  • To achieve a breakdown voltage exceeding 100 V while maintaining a low specific on-resistance.
  • To ensure the device is compatible with conventional fabrication processes.

Main Methods:

  • Design and simulation of a novel nLDMOSFET structure.
  • Incorporation of a gap between the DEEP N-WELL and the source region.
  • Surface implantation of an NADJUST-layer.
  • Computer simulations to evaluate breakdown voltage (BVdss) and specific on-resistance (R(ON,sp)).

Main Results:

  • The proposed High-Side nLDMOSFET achieved a simulated breakdown voltage (BVdss) of 126 V.
  • The specific on-resistance (R(ON,sp)) was as low as 2.50 mΩ·cm².
  • The study identified the NBL (blocking layer) as a potential limitation for further breakdown voltage enhancement.

Conclusions:

  • The novel High-Side nLDMOSFET design successfully demonstrates high breakdown voltage and low on-resistance.
  • The specific structural features, including the gap and NADJUST-layer, are effective in achieving the desired performance metrics.
  • Further research may be needed to overcome the limitations imposed by the NBL for even higher breakdown voltages.