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Related Concept Videos

Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Carrier Generation and Recombination01:22

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
Potential Due to a Polarized Object01:29

Potential Due to a Polarized Object

A neutral atom consists of a positively charged nucleus surrounded by a negatively charged electron cloud. When placed in an external electric field, the external electric force pulls the electrons and nucleus apart, opposite to the intrinsic attraction between the nucleus and the electrons. The opposing forces balance each other with a slight shift between the center of masses of the nucleus and the electron cloud, resulting in a polarized atom. On the other hand, a few molecules, like water,...

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Related Experiment Video

Updated: May 9, 2026

A Photonic System for Generating Unconditional Polarization-Entangled Photons Based on Multiple Quantum Interference
07:56

A Photonic System for Generating Unconditional Polarization-Entangled Photons Based on Multiple Quantum Interference

Published on: September 5, 2019

Inherent polarization entanglement generated from a monolithic semiconductor chip.

Rolf T Horn1, Piotr Kolenderski, Dongpeng Kang

  • 1Institute for Quantum Computing and Department of Physics and Astronomy, University of Waterloo, 200 University Avenue W, Waterloo, Ontario, N2L 3G1, Canada.

Scientific Reports
|July 31, 2013
PubMed
Summary

Researchers developed a chip-scale photonic device, the Bragg reflection waveguide (BRW), that directly generates polarization-entangled photons. This breakthrough advances scalable quantum information processing and optical quantum computing.

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Last Updated: May 9, 2026

A Photonic System for Generating Unconditional Polarization-Entangled Photons Based on Multiple Quantum Interference
07:56

A Photonic System for Generating Unconditional Polarization-Entangled Photons Based on Multiple Quantum Interference

Published on: September 5, 2019

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
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Published on: July 17, 2015

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
12:19

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

Area of Science:

  • Quantum optics
  • Photonic integrated circuits
  • Quantum information science

Background:

  • Miniaturizing optical quantum information protocols is crucial for stability and scalability in quantum optics.
  • Existing methods often require complex setups for generating entangled photons.

Purpose of the Study:

  • To present a monolithically integratable chip architecture for quantum information processing.
  • To demonstrate a novel photonic device primitive, the Bragg reflection waveguide (BRW), for direct entangled photon generation.

Main Methods:

  • Implementation of a Bragg reflection waveguide (BRW) in gallium arsenide.
  • Utilizing spontaneous parametric down-conversion (SPDC) for photon generation.
  • Performing correlation tests on polarization-entangled photon pairs.

Main Results:

  • The BRW directly produced polarization-entangled photons without path compensation or spectral filtering.
  • Demonstrated non-classical polarization behavior in photon pairs via correlation tests.
  • Validated the BRW as a scalable platform for quantum optical devices.

Conclusions:

  • The BRW architecture offers a direct and efficient method for generating polarization-entangled photons on-chip.
  • This development is a significant step towards scalable optical quantum computing and information processing.
  • The BRW's versatility positions it as a key component for future quantum technologies.