Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity arises...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Analysis of Nanosensor-Reported Waveforms for Plant Wounding.

Nano letters·2026
Same author

Dynamic estimation of metabolic state during CAR T cell production.

Cell reports methods·2026
Same author

Monolithic Electronic-Biophotonic System-on-Chip for Label-Free Real-Time Molecular Sensing.

IEEE journal of solid-state circuits·2025
Same author

Early detection of fungal infection of Arabidopsis and brassica by Raman spectroscopy.

Frontiers in plant science·2025
Same author

Automated, aseptic sampling with small-volume capacity from microbioreactors for cell therapy process analysis.

Frontiers in bioengineering and biotechnology·2025
Same author

Chemical sensing as a utility using parallel, distributed swept source Raman spectroscopy.

Optics express·2025

Related Experiment Video

Updated: May 9, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Depletion-mode polysilicon optical modulators in a bulk complementary metal-oxide semiconductor process.

Jeffrey M Shainline1, Jason S Orcutt, Mark T Wade

  • 1Department of Electrical, Computer and Energy Engineering, University of Colorado, Boulder, Colorado 80309, USA. jeffrey.shainline@osamember.org

Optics Letters
|August 2, 2013
PubMed
Summary
This summary is machine-generated.

We developed novel depletion-mode optical modulators using bulk silicon CMOS technology. These devices enable high-speed, low-energy photonic links for integrated circuits.

More Related Videos

Characterization of Anisotropic Leaky Mode Modulators for Holovideo
09:36

Characterization of Anisotropic Leaky Mode Modulators for Holovideo

Published on: March 19, 2016

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms
08:48

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms

Published on: September 25, 2020

Related Experiment Videos

Last Updated: May 9, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Characterization of Anisotropic Leaky Mode Modulators for Holovideo
09:36

Characterization of Anisotropic Leaky Mode Modulators for Holovideo

Published on: March 19, 2016

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms
08:48

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms

Published on: September 25, 2020

Area of Science:

  • Photonics
  • Materials Science
  • Electrical Engineering

Background:

  • Bulk complementary metal-oxide semiconductor (CMOS) processes are widely used for microelectronics.
  • Integrating active photonic devices into standard CMOS fabrication remains a challenge.
  • Existing silicon photonics often require specialized fabrication steps beyond standard CMOS.

Purpose of the Study:

  • To demonstrate depletion-mode carrier-plasma optical modulators fabricated within a standard bulk CMOS DRAM-emulation process.
  • To introduce novel optical microcavities for efficient modulation in silicon.
  • To enable monolithic integration of photonic links with CMOS circuits.

Main Methods:

  • Fabrication of optical modulators using a bulk CMOS DRAM-emulation process.
  • Design of novel optical microcavities utilizing periodic spatial interference of guided modes.
  • Placement of electrical contacts at field nulls within the microcavities to maintain high optical quality (Q).
  • Testing of device performance at a 5 Gbps data modulation rate near 1610 nm wavelength.

Main Results:

  • Demonstration of the first depletion-mode modulators in polycrystalline silicon and bulk CMOS.
  • Achieved modulation depths of 3.1 dB and 4.2 dB for two device variants.
  • Reported insertion losses of 1.5 dB and 4.0 dB.
  • Demonstrated low energy consumption, with one variant achieving 60 fJ/bit.

Conclusions:

  • These modulators represent a significant advancement for active photonics in bulk silicon CMOS.
  • The developed microcavity design enables active devices in processes without partial silicon etch.
  • The work lays the foundation for monolithically integrated CMOS-to-DRAM photonic links.