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Updated: May 9, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
Published on: November 24, 2016
Kinase detection with gallium nitride based high electron mobility transistors
Matthew S Makowski1, Isaac Bryan, Zlatko Sitar
1Weldon School of Biomedical Engineering, Purdue University, West Lafayette, Indiana 47907, USA ; Indiana University School of Medicine, Indianapolis, Indiana 46202, USA.
Abstract:
A label-free kinase detection system was fabricated by the adsorption of gold nanoparticles functionalized with kinase inhibitor onto AlGaN/GaN high electron mobility transistors (HEMTs). The HEMTs were operated near threshold voltage due to the greatest sensitivity in this operational region. The Au NP/HEMT biosensor system electrically detected 1 pM SRC kinase in ionic solutions. These results are pertinent to drug development applications associated with kinase sensing.

