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Updated: May 9, 2026

Electrospray Deposition of Uniform Thickness Ge23Sb7S70 and As40S60 Chalcogenide Glass Films
Published on: August 19, 2016
Study of the EFG tensor at 75As nuclei in Ge-As-Se chalcogenide glasses
O N Bolebrukh1, N Ya Sinyavsky, B Dobosz
1Laboratory of Magnetic Resonance, Institute of Physics and Technology, Immanuel Kant Baltic Federal University, A. Nevski 14, 236041, Kaliningrad, Russia.
Abstract:
Asymmetry parameters of the electric field gradient tensor at (75) As nuclei were determined for chalcogenide glassy semiconductors (CGS) of the Ge-As-Se system by comparing the experimental and simulated (75) As nuclear quadrupole resonance nutation interferograms. The electric field gradient asymmetry in CGS was analyzed, and it is believed that a structural change in these glassy semiconductors takes place at r¯ = 2.425. Electron paramagnetic resonance spectra of the Ge-As-Se system were obtained for the first time. A comparison was made between the results of analysis of the Ge-As-Se system by nuclear quadrupole resonance and electron paramagnetic resonance methods, and this allowed us to make the supposition that a structural phase transition occurs at r¯ = 2.4 from two-dimensional to three-dimensional CGS structure.

