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Updated: May 9, 2026

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
Published on: August 29, 2025
A semi-floating gate transistor for low-voltage ultrafast memory and sensing operation
Peng-Fei Wang1, Xi Lin, Lei Liu
1State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China. pfw@fudan.edu.cn
This study introduces a novel transistor design using a tunneling field-effect transistor for advanced integrated circuits. The new semiconductor device offers high speed and low voltage operation, enabling next-generation electronics and image sensors.
Area of Science:
- Semiconductor device physics
- Integrated circuit design
- Novel transistor architectures
Background:
- Integrated circuits face scaling limitations, necessitating new transistor and memory designs.
- Improvements in speed, density, and power consumption are critical for future electronic devices.
Purpose of the Study:
- To report on a novel transistor design utilizing an embedded tunneling field-effect transistor (TFET).
- To evaluate the performance characteristics of this new transistor for potential applications.
Main Methods:
- Fabrication and characterization of a transistor with an embedded TFET for semi-floating gate control.
- Measurement of operating voltages, threshold voltage window, and writing speeds.
- Analysis of transistor response to light exposure.
Main Results:
- The transistor operates at low voltages (≤2.0 V) with a large threshold voltage window (3.1 V).
- Ultra-high-speed writing operations were achieved on the order of ~1 nanosecond.
- A linear relationship between drain current and light intensity was observed.
Conclusions:
- The developed transistor shows promise for overcoming current semiconductor scaling challenges.
- Potential applications include high-density, high-performance image sensing.
- The device's characteristics support its use in advanced electronic systems requiring speed and efficiency.
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