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Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride
Mei Yin Chan1, Katsuyoshi Komatsu, Song-Lin Li
1WPI Center for Materials Nanoarchitechtonics (WPI-MANA), National Institute for Material Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan. tsukagoshi.kazuhito@nims.go.jp.
Abstract:
We present the temperature-dependent carrier mobility of atomically thin MoS2 field-effect transistors on crystalline hexagonal boron nitride (h-BN) and SiO2 substrates. Our results reveal distinct weak temperature dependence of the MoS2 devices on h-BN substrates. The room temperature mobility enhancement and reduced interface trap density of the single and bilayer MoS2 devices on h-BN substrates further indicate that reducing substrate traps is crucial for enhancing the mobility in atomically thin MoS2 devices.
