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Updated: May 8, 2026

Epitaxial Nanostructured α-Quartz Films on Silicon: From the Material to New Devices
Published on: October 6, 2020
The quasiparticle band dispersion in epitaxial multilayer silicene
Paola De Padova1, Jose Avila, Andrea Resta
1Consiglio Nazionale delle Ricerche-ISM, via Fosso del Cavaliere 100, I-00133 Roma, Italy. paola.depadova@ism.cnr.it
Abstract:
The growth of multilayer silicene is an exciting challenge for the future of silicon nano-electronics. Here, we use angle-resolved photoemission spectroscopy to map the entire Brillouin zone (BZ) of (√3 × √3)R30° reconstructed epitaxial multilayer silicene islands, growing on top of the first (3 × 3) reconstructed silicene wetting layer, on Ag(111) substrates. We found Λ- and V-shape linear dispersions, which we relate to the π and π* bands of massless quasiparticles in multilayer silicene, at the BZ centre [Formula: see text] and at all the [Formula: see text] centres of the (√3 × √3)R30° Brillouin zones in the extended scheme, due to folding of the Dirac cones at the [Formula: see text] and [Formula: see text] points of the (1 × 1) silicene BZ. The Fermi velocity of ∼0.3 × 10(6) m s(-1) obtained is highly promising for potential silicene-based devices.
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