Crystal Growth: Principles of Crystallization
Imperfections in Crystal Structure: Stoichiometric Point Defects
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Published on: December 2, 2013
Vladimir A Vlaskin1, Charles J Barrows, Christian S Erickson
1Department of Chemistry, University of Washington , Seattle, Washington 98195-1700, United States.
This study introduces a new method for doping semiconductor nanocrystals by diffusion, enabling precise control over composition without altering size or shape. This technique allows for the creation of novel doped nanostructures with enhanced properties.
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