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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free

Sefaattin Tongay1, Joonki Suh, Can Ataca

  • 11] Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States [2] Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China [3].

Scientific Reports
|September 14, 2013
PubMed

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