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Updated: May 7, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Wide-gap semiconducting graphene from nitrogen-seeded SiC.

F Wang1, G Liu, S Rothwell

  • 1School of Physics, The Georgia Institute of Technology , Atlanta, Georgia 30332-0430, United States.

Nano Letters
|September 25, 2013
PubMed
Summary
This summary is machine-generated.

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Researchers created semiconducting graphene, a key material for electronics, by using nitrogen to create a band gap. This breakthrough overcomes a major hurdle in developing advanced graphene-based electronic devices.

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Graphene's unique electronic properties have long promised revolutionary applications in electronics.
  • However, the absence of a significant band gap in pristine graphene has hindered its use in semiconductor devices.
  • Previous efforts to engineer a band gap have faced limitations in scalability and effectiveness.

Purpose of the Study:

  • To develop a method for producing semiconducting graphene with a tunable band gap.
  • To overcome the limitations of existing techniques for band gap engineering in graphene.
  • To enable the development of graphene-based electronic components.

Main Methods:

  • Utilizing a submonolayer concentration of nitrogen during the growth of epitaxial graphene on silicon carbide (SiC).

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  • Employing nitrogen to effectively pin the graphene to the SiC substrate interface.
  • Characterizing the resulting graphene structure and its electronic properties.

    • Main Results:

    • Successfully produced semiconducting graphene with a band gap exceeding 0.7 eV.
    • Demonstrated that nitrogen doping at the interface modifies the graphene structure, inducing buckling.
    • Overcame the challenge of creating a band gap in an otherwise metallic graphene sheet.

    Conclusions:

    • The developed method provides a viable route to engineer semiconducting graphene.
    • This advancement is crucial for realizing the potential of graphene in next-generation electronics.
    • The controlled introduction of nitrogen offers a scalable approach to band gap engineering in graphene.