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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors

Cheol Hyoun Ahn1, Karuppanan Senthil, Hyung Koun Cho

  • 1School of Advanced Materials Science and Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do, 440-746, Republic of Korea.

Scientific Reports
|September 25, 2013
PubMed

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