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Polytypic InP nanolaser monolithically integrated on (001) silicon
Zhechao Wang1, Bin Tian, Mohanchand Paladugu
1INTEC Department, Ghent University , Sint-Pietersnieuwstraat 41, Ghent 9000, Belgium.
Nano Letters
|October 1, 2013
Summary
Researchers developed a silicon-integrated Indium Phosphide (InP) nanolaser. This high-performance device operates at room temperature, crucial for advanced optical interconnects on silicon chips.
Area of Science:
- Materials Science
- Optoelectronics
- Nanotechnology
Background:
- On-chip optical interconnects require high-performance lasers integrated directly onto silicon platforms.
- Current silicon photonics lack efficient, monolithic laser sources.
Purpose of the Study:
- To demonstrate a silicon-integrated Indium Phosphide (InP) nanolaser.
- To achieve room-temperature operation with a low lasing threshold.
Main Methods:
- Developed an epitaxial growth scheme for InP nanowires on (001) silicon.
- Investigated crystal phase polytypism (zincblende/wurtzite) and type II heterostructures.
Main Results:
- Achieved a room-temperature InP nanolaser integrated on silicon.
- Demonstrated a low threshold energy of 1.69 picojoules (pJ).
- Observed a high spontaneous emission factor of 0.04, promoting efficient lasing.
Conclusions:
- The developed InP nanolaser is a viable solution for silicon photonics.
- Crystal phase variations and heterostructures enable wide wavelength lasing.
- This integration advances the development of on-chip optical interconnects.
