Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity arises...
Switching of BJT01:22

Switching of BJT

Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are reverse-biased. The...
Bipolar Junction Transistor01:22

Bipolar Junction Transistor

Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational characteristics.
The structure...
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Rapid <i>de novo</i> assembly of animal-microbe biofilter to mitigate seabed methane leakage.

National science review·2026
Same author

Machine learning model for predicting rebleeding risk after endoscopic variceal ligation in esophageal variceal bleeding.

Scientific reports·2026
Same author

Accumulation of metabolic multimorbidity and its association with mortality: results from a prospective cohort study among people with HIV in China, 2010-2024.

The Lancet regional health. Western Pacific·2026
Same author

Incidence, recurrence, and determinants of sexually transmitted infections among people with HIV: a multicenter cohort study in China, 2010-2024, with implications for integrated HIV-STI prevention across the Western Pacific.

The Lancet regional health. Western Pacific·2026
Same author

Intertidal heterogeneity shapes the metabolomic profile and antialgal potential of Spartina alterniflora.

Marine pollution bulletin·2026
Same author

Immune cells in chronic prostatitis/chronic pelvic pain syndrome: From pathological mechanisms to therapeutic opportunities.

Cellular signalling·2026
Same journal

Gaussian-modulated continuous-variable quantum key distribution over 60 km fiber using an integrated silicon photonic receiver.

Optics letters·2026
Same journal

E2E-OCT: end-to-end joint learning model using optical coherence tomography images for vocal cord leukoplakia diagnosis.

Optics letters·2026
Same journal

Holographic generation of panoramic 3D scenes by concave ellipsoidal mirror reflection.

Optics letters·2026
Same journal

Dual-pilot phase recovery with pair-wise maximum-ratio combining for coherent PONs.

Optics letters·2026
Same journal

Mapping the whispering gallery modes of a CaF<sub>2</sub> disk resonator with half-tapered fibers to estimate the fundamental mode volume.

Optics letters·2026
Same journal

Quantitative estimation of deep-subwavelength scale via dark-field scattering axial energy concentration decay profiles.

Optics letters·2026
See all related articles

Related Experiment Video

Updated: May 7, 2026

Hybrid Microdrive System with Recoverable Opto-Silicon Probe and Tetrode for Dual-Site High Density Recording in Freely Moving Mice
08:57

Hybrid Microdrive System with Recoverable Opto-Silicon Probe and Tetrode for Dual-Site High Density Recording in Freely Moving Mice

Published on: August 10, 2019

Nonblocking 4×4 silicon electro-optic switch matrix with push-pull drive.

Jiejiang Xing, Zhiyong Li, Peiji Zhou

    Optics Letters
    |October 2, 2013
    PubMed
    Summary
    This summary is machine-generated.

    A novel 4x4 silicon electro-optic switch matrix was developed using standard CMOS technology. This compact device offers low crosstalk and efficient power consumption for optical switching applications.

    More Related Videos

    Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
    05:57

    Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

    Published on: April 1, 2020

    Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
    14:58

    Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

    Published on: June 3, 2015

    Related Experiment Videos

    Last Updated: May 7, 2026

    Hybrid Microdrive System with Recoverable Opto-Silicon Probe and Tetrode for Dual-Site High Density Recording in Freely Moving Mice
    08:57

    Hybrid Microdrive System with Recoverable Opto-Silicon Probe and Tetrode for Dual-Site High Density Recording in Freely Moving Mice

    Published on: August 10, 2019

    Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
    05:57

    Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

    Published on: April 1, 2020

    Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
    14:58

    Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

    Published on: June 3, 2015

    Area of Science:

    • Photonics and Optical Engineering
    • Semiconductor Device Fabrication
    • Integrated Optics

    Background:

    • Silicon photonics enables advanced optical communication components.
    • Electro-optic modulators are key for optical switching.
    • Spanke-Beneš networks offer nonblocking switch matrix architectures.

    Purpose of the Study:

    • To propose and fabricate a compact, rearrangeable, nonblocking 4x4 silicon electro-optic switch matrix.
    • To evaluate the crosstalk and power consumption performance of the fabricated switch matrix.
    • To demonstrate the feasibility of using standard CMOS lines for advanced photonic integrated circuits.

    Main Methods:

    • Design and fabrication of a 4x4 switch matrix using a 0.18 μm standard commercial CMOS line.
    • Implementation of a Spanke-Beneš network architecture.
    • Utilizing push-pull drive modulation for the electro-optic switching elements.
    • Characterization of crosstalk (CT) and power consumption across different routing states.

    Main Results:

    • Achieved a crosstalk (CT) of less than -18 dB for individual switching elements with 150-μm modulation arms.
    • Demonstrated a total steady-state power consumption ranging from 4.46 to 35.92 mW.
    • Observed CT values below -19 dB for minimum power states and below -12 dB for maximum power states.

    Conclusions:

    • The fabricated silicon electro-optic switch matrix is compact, nonblocking, and rearrangeable.
    • The device exhibits excellent crosstalk performance suitable for optical communication systems.
    • Standard CMOS fabrication is viable for producing advanced silicon photonic switch matrices with competitive performance.