Updated: May 6, 2026

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
Published on: July 11, 2025
Jeehwan Kim1, Hongsik Park, James B Hannon
1IBM T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, NY 10598, USA.
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Researchers developed a new method for producing high-quality, single-oriented monolayer graphene films. This technique utilizes nickel and gold films to exfoliate and transfer graphene grown on silicon carbide, enabling controlled film production for advanced electronic devices.
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