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Hiroko Yamada1, Yuji Yamaguchi, Ryuta Katoh

  • 1Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5, Ikoma, Nara 630-0192, Japan. hyamada@ms.naist.jp.

Chemical Communications (Cambridge, England)
|November 5, 2013
PubMed

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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