Modelling and engineering of stress based controlled oxidation effects for silicon nanostructure patterning

Area of Science:

• Materials Science and Engineering
• Nanotechnology
• Semiconductor Physics

Background:

• Precise control over silicon nanostructure geometry is a significant challenge in nanofabrication.
• Stress-based controlled oxidation is a promising technique for achieving high-precision nanofabrication.

Purpose of the Study:

• To investigate the phenomenon of stress-retarded oxidation in various silicon nanostructures.
• To experimentally and theoretically analyze the complex dependence of stress build-up on nanostructure dimensions, shape, and size.
• To explore shape engineering possibilities using retarded oxidation for vertical silicon nanowires.

Main Methods:

• Fabrication of diverse silicon nanostructures (nanobeams, nanorings, nanowires) using a top-down approach.
• Experimental investigation of stress-retarded oxidation phenomena.
• Theoretical modeling and physical explanation of stress build-up mechanisms.

Main Results:

• Demonstrated complex dependence of stress build-up on nanostructure dimensions, shape, and size.
• Observed relative independence of oxidation from size effects in 2D nanobeams.
• Emphasized radial stress increase with downscaling in 1D nanowires.

Conclusions:

• Stress-retarded oxidation is an effective tool for precise nanofabrication of silicon nanostructures.
• Oxidation behavior is strongly influenced by nanostructure geometry, with distinct size-dependent effects for 1D and 2D structures.
• Retarded oxidation offers potential for shape engineering of silicon nanowires.