Structural and magnetic features of oxygen inserted [Co-O/Pt]n multi-layer matrix for spin transfer torque memory
Ja Bin Lee1, Gwang Guk An, Seung Mo Yang
1Novel Functional Materials and Devices Laboratory, Research Institute of Natural Science, Department of Physics, Hanyang University, Seoul 133-791, Korea.
Journal of Nanoscience and Nanotechnology
|November 20, 2013
Summary
Adding oxygen to [Co/Pt]n multilayers enhances magnetic properties. This research explores oxygen
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Perpendicular magnetic recording media are crucial for high-density data storage.
- Spin transfer torque magnetic random access memory (STT-MRAM) requires advanced magnetic materials.
- Controlling interfacial properties in multilayer systems is key to optimizing performance.
Purpose of the Study:
- To investigate the effect of inserted oxygen atoms on the structural and magnetic properties of [Co/Pt]n multilayers.
- To evaluate [Co/Pt]n multilayers with oxygen as a potential perpendicular medium for STT-MRAM.
- To correlate magnetic properties with oxygen gas flow rate.
Main Methods:
- Fabrication of [Co/Pt]n multilayers with varying oxygen gas flow rates.
- Structural characterization using techniques like X-ray diffraction and transmission electron microscopy.
- Magnetic property measurements including coercivity, saturation magnetization, and thermal stability analysis.
Main Results:
- A small amount of oxygen insertion into the [Co/Pt]n multilayer matrix significantly improves coercivity.
- Optimized oxygen levels lead to desirable magnetization performance and enhanced thermal stability.
- The study reveals improved perpendicular magnetic medium behavior with controlled oxygen incorporation.
Conclusions:
- Oxygen incorporation is an effective strategy to tune the magnetic properties of [Co/Pt]n multilayers.
- These oxygen-modified multilayers show promise as advanced perpendicular media for STT-MRAM applications.
- Understanding the role of oxygen at interfaces is critical for future materials design.
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