Related Experiment Video
Updated: May 5, 2026
10:36
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
10.6K
Ferroelectric polarization induces electric double layer bistability in electrolyte-gated field-effect transistors
Simone Fabiano1, Xavier Crispin, Magnus Berggren
1Organic Electronics, Department of Science and Technology, Linköping University , SE-601 74, Norrköping, Sweden.
ACS Applied Materials & Interfaces
|November 21, 2013
Summary
Ferroelectric polymer thin films enable novel organic memory transistors. This technology allows for non-destructive readout by leveraging hysteresis effects in electric double-layer capacitors for efficient charge control.
Area of Science:
- Materials Science
- Organic Electronics
- Nanotechnology
Background:
- Ferroelectric materials exhibit spontaneous electric polarization.
- Polyelectrolytes are polymers with charged groups.
- Electric double layers form at interfaces between charged surfaces and electrolytes.
Purpose of the Study:
- To investigate the coupling between ferroelectric polymer thin films and polyelectrolyte layers.
- To utilize this coupling for developing novel memory devices.
- To explore the hysteresis effects in electric double-layer capacitors for transistor applications.
Main Methods:
- Fabrication of ferroelectric polymeric thin films and polyelectrolyte layers.
- Characterization of interface properties and charge dynamics.
- Integration into organic field-effect transistor structures.
- Electrical measurements to assess memory performance.
Main Results:
- Demonstrated ion displacement induced by ferroelectric surface charges.
- Achieved matched polarization switching times between ferroelectric dipoles and electric double layers.
- Introduced hysteresis effects in electric double-layer capacitor capacitance.
- Developed memory transistors with distinct write (7 V) and read-out (50 mV) voltages.
Conclusions:
- Ferroelectric/polyelectrolyte interfaces enable efficient control of charge accumulation.
- The developed memory transistors exhibit non-destructive readout capabilities.
- This technology holds promise for low-power, high-performance organic memory devices.
Related Concept Videos
01:30The Electrical Double Layer
249
In the region where two bulk phases meet, an intricate electric charge distribution arises due to charge transfer, ion adsorption, molecular orientation, and charge distortion. This complex distribution is commonly referred to as the electrical double layer.When a solid electrode interfaces with ions in an electrolyte solution, the speed of electron transfer dictates the rates of oxidation and reduction. The electrode acquires a charge through the escape of atoms into the solution as cations or...
249
01:22Biasing of FET
1.0K
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
1.0K
01:27Biasing of Metal-Semiconductor Junctions
919
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
919
01:29Field Effect Transistor
1.8K
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
1.8K
01:28Induced Electric Dipoles
4.0K
A permanent electric dipole orients itself along an external electric field. This rotation can be quantified by defining the potential energy because the external torque does work in rotating it. Then, the potential energy is minimum at the parallel configuration and maximum at the antiparallel configuration. While the former is a stable equilibrium, the latter is an unstable equilibrium.
Since the absolute value of potential energy holds no physical meaning, its zero value can be chosen as per...
Since the absolute value of potential energy holds no physical meaning, its zero value can be chosen as per...
4.0K
01:31Dielectric Polarization in a Capacitor
5.5K
The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
5.5K