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High-fidelity gates in quantum dot spin qubits.

Teck Seng Koh1, S N Coppersmith, Mark Friesen

  • 1Department of Physics, University of Wisconsin, Madison, WI 53706.

Proceedings of the National Academy of Sciences of the United States of America
|November 21, 2013
PubMed
Summary
This summary is machine-generated.

A new theoretical framework allows fair comparison of different quantum dot qubit control schemes. This method predicts high gate fidelities (~99.5%) for silicon-based qubits, but lower fidelities for GaAs due to nuclear spin noise.

Keywords:
Heisenberg exchangedecoherencequantum computing

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Area of Science:

  • Quantum Computing
  • Semiconductor Physics
  • Quantum Information Science

Background:

  • Semiconductor quantum dots are promising platforms for realizing logical qubits and quantum gates.
  • Comparing different qubit-gating schemes is challenging due to varied control parameters and metrics.

Purpose of the Study:

  • Develop a unified theoretical framework to evaluate and compare diverse quantum dot qubit-gating schemes.
  • Assess the performance of specific gates on singlet-triplet and hybrid qubits.

Main Methods:

  • A two-step procedure: 1. Optimize gate fidelity (f) as a function of interdot coupling (g). 2. Determine physical constraints to establish an upper fidelity bound (f_max).
  • Applied the framework to analyze DC pulsed, AC resonant, and stimulated Raman adiabatic passage gates.
  • Investigated singlet-triplet and hybrid qubits in silicon (isotopically purified and natural) and gallium arsenide (GaAs).

Main Results:

  • Achieved universal optimized gate fidelities (f(opt)(g)) applicable across different gate types.
  • Predicted similar high gate fidelities (~99.5%) for singlet-triplet and hybrid qubits in silicon.
  • Identified significantly lower fidelities in GaAs qubits due to fluctuating nuclear spin magnetic fields (ΔB).

Conclusions:

  • The developed framework provides a standardized method for comparing qubit-gating schemes.
  • Silicon-based quantum dots offer a viable path towards high-fidelity quantum gates.
  • Nuclear spin interactions in GaAs present a significant challenge for achieving high gate fidelities.