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Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

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Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
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MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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Characteristics of MOSFET01:17

Characteristics of MOSFET

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Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
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MOSFET01:16

MOSFET

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The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
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MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

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Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
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Biasing of FET01:22

Biasing of FET

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Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
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Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
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Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

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Split-gate organic field-effect transistors for high-speed operation.

T Uemura1, T Matsumoto, K Miyake

  • 1Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8561, Japan.

Advanced Materials (Deerfield Beach, Fla.)
|January 28, 2014
PubMed
Summary
This summary is machine-generated.

High-speed organic field-effect transistors were developed using a split-gate design. These devices exhibit fast switching speeds, with solution-processed transistors achieving a record 10 MHz cutoff frequency.

Keywords:
contact resistanceorganic electronicsorganic field-effect transistors

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Area of Science:

  • Organic electronics
  • Semiconductor device physics

Background:

  • Organic field-effect transistors (OFETs) are crucial for flexible electronics.
  • Improving the operating speed of OFETs is a key challenge for advanced applications.

Purpose of the Study:

  • To develop high-speed split-gate organic field-effect transistors.
  • To investigate the impact of reduced contact resistance and parasitic capacitance on device performance.

Main Methods:

  • Fabrication of split-gate organic field-effect transistors using both vacuum evaporation and solution processing.
  • Characterization of device switching characteristics and cutoff frequencies.

Main Results:

  • Split-gate design enables high-speed operation in OFETs.
  • Vacuum-evaporated devices achieved a cutoff frequency of 20 MHz.
  • Solution-processed devices reached a cutoff frequency of 10 MHz, the fastest reported for this class.

Conclusions:

  • Split-gate architecture effectively enhances switching speeds in OFETs.
  • Solution-processed OFETs demonstrate competitive high-speed performance, paving the way for low-cost, high-performance organic electronics.