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Position-controlled uniform GaAs nanowires on silicon using nanoimprint lithography
A M Munshi1, D L Dheeraj, V T Fauske
1Department of Electronics and Telecommunications, Norwegian University of Science and Technology (NTNU) , NO-7491 Trondheim, Norway.
Nano Letters
|January 29, 2014
Summary
We demonstrate the successful epitaxial growth of position-controlled gallium arsenide (GaAs) nanowires on silicon using nanoimprint lithography and molecular beam epitaxy. This integration is crucial for advanced optoelectronic devices.
Area of Science:
- Materials Science
- Nanotechnology
- Semiconductor Physics
Background:
- Heterogeneous integration of III-V semiconductors on silicon is essential for advanced electronic and optoelectronic devices.
- Gallium arsenide (GaAs) nanowires offer unique properties for next-generation applications.
- Achieving position-controlled growth of GaAs nanowires on silicon remains a significant challenge.
Purpose of the Study:
- To report on the epitaxial growth of large-area, position-controlled, self-catalyzed GaAs nanowires directly on silicon.
- To optimize growth parameters for high-yield vertical nanowire formation.
- To investigate the optical properties of GaAs/AlGaAs core-shell heterostructures grown on silicon.
Main Methods:
- Utilizing nanoimprint lithography (NIL) to define nanohole patterns on SiO2 masks on silicon wafers.
- Employing molecular beam epitaxy (MBE) for the self-catalyzed growth of GaAs nanowires.
- Characterizing the nanowire/substrate interface using cross-sectional transmission electron microscopy (TEM).
- Assessing optical properties via room-temperature photoluminescence (PL) spectroscopy.
Main Results:
- Achieved position-controlled, epitaxial growth of GaAs nanowires on silicon substrates.
- Optimized MBE parameters (Ga predeposition, fluxes, temperature, annealing) for vertical NW yield.
- Observed non-negligible radial growth, independent of As species and temperature.
- TEM confirmed epitaxial growth with NW bases filling oxide holes and extending over the mask.
- Demonstrated uniform, high optical quality in room-temperature PL of GaAs/AlGaAs core-shell nanowires.
Conclusions:
- The combination of NIL and MBE enables successful heterogeneous integration of uniform GaAs nanowires on silicon.
- This approach facilitates the fabrication of high-throughput, large-area, position-controlled nanowire arrays.
- Findings have significant implications for designing NW-based devices with axial and radial p-n junctions for optoelectronics.
