Random lasing over gap states from a quasi-one-dimensional amplifying periodic-on-average random superlattice

Anjani Kumar Tiwari1, Sushil Mujumdar1

  • 1Nano-optics and Mesoscopic Optics Laboratory, Tata Institute of Fundamental Research, 1, Homi Bhabha Road, Mumbai 400 005, India.

Physical Review Letters
|January 31, 2014
PubMed

Related Concept Videos

Carrier Generation and Recombination01:22

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
1.5K
Atomic Nuclei: Nuclear Relaxation Processes01:23

Atomic Nuclei: Nuclear Relaxation Processes

In the absence of an external magnetic field, nuclear spin states are degenerate and randomly oriented. When a magnetic field is applied, the spins begin to precess and orient themselves along (lower energy) or against (higher energy) the direction of the field. At equilibrium, a slight excess population of spins exists in the lower energy state. Because the direction of the magnetic field is fixed as the z-axis,  the precessing magnetic moments are randomly oriented around the z-axis.
1.1K
Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
1.4K
Oscillations In An LC Circuit01:30

Oscillations In An LC Circuit

An idealized LC circuit of zero resistance can oscillate without any source of emf by shifting the energy stored in the circuit between the electric and magnetic fields. In such an LC circuit, if the capacitor contains a charge q before the switch is closed, then all the energy of the circuit is initially stored in the electric field of the capacitor. This energy is given by
2.7K
Current Growth And Decay In RL Circuits01:30

Current Growth And Decay In RL Circuits

The current growth and decay in RL circuits can be understood by considering a series RL circuit consisting of a resistor, an inductor, a constant source of emf, and two switches. When the first switch is closed, the circuit is equivalent to a single-loop circuit consisting of a resistor and an inductor connected to a source of emf. In this case, the source of emf produces a current in the circuit. If there were no self-inductance in the circuit, the current would rise immediately to a steady...
4.2K