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Ultralow loss single layer submicron silicon waveguide crossing for SOI optical interconnect
Optics Express
|February 12, 2014
Summary
We developed compact silicon waveguide crossings with ultralow loss at 1550 nm and 1310 nm. These devices, crucial for integrated photonics, exhibit minimal signal degradation and crosstalk.
Area of Science:
- Photonics
- Materials Science
- Electrical Engineering
Background:
- Silicon photonics is a rapidly growing field for optical communication and computation.
- Efficient waveguide crossings are essential components for complex photonic integrated circuits (PICs).
- Existing waveguide crossings often suffer from high insertion loss and crosstalk, limiting device performance.
Purpose of the Study:
- To demonstrate novel, compact, broadband, and ultralow loss silicon waveguide crossings.
- To achieve high performance at telecommunication wavelengths (1550 nm and 1310 nm).
- To ensure compatibility with standard CMOS fabrication processes.
Main Methods:
- Fabrication of silicon waveguide crossings using a CMOS-compatible process.
- Utilization of 248 nm optical lithography and a single etch step.
- Characterization of device performance, including transmission insertion loss and crosstalk, across multiple dies.
Main Results:
- Achieved ultralow transmission insertion loss: -0.028 ± 0.009 dB at 1550 nm and -0.017 ± 0.005 dB at 1310 nm.
- Demonstrated excellent crosstalk suppression below -37 dB for both wavelengths.
- Confirmed device compactness and broadband operation.
Conclusions:
- The developed silicon waveguide crossings offer state-of-the-art performance in terms of loss and crosstalk.
- These devices are suitable for advanced PICs, enabling more complex and efficient photonic systems.
- The CMOS-compatible fabrication process ensures scalability and cost-effectiveness for mass production.
