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Is there a Stobbs factor in atomic-resolution STEM-EELS mapping?

Huolin L Xin1, Christian Dwyer2, David A Muller3

  • 1Department of Physics, Cornell University, Ithaca, NY 14853, USA.

Ultramicroscopy
|February 25, 2014
PubMed
Summary
This summary is machine-generated.

This study advances atomic-resolution scanning transmission electron microscopy-electron energy loss spectroscopy (STEM-EELS) by accurately simulating core-loss signals. Quantitative STEM-EELS enables precise atom counting, particularly at higher energy losses.

Keywords:
Atomic resolution STEM-EELSDelocalizationDouble channelingInelastic scatteringStobbs factor

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Area of Science:

  • Materials Science
  • Physics
  • Chemistry

Background:

  • Discrepancies in atomic-resolution STEM imaging contrast, known as the Stobbs factor, were previously addressed by including source size in simulations.
  • However, similar progress for atomic-resolution STEM-EELS mapping remained limited.

Purpose of the Study:

  • To accurately simulate atomic-resolution STEM-EELS signals by incorporating experimental parameters.
  • To enable quantitative STEM-EELS for atom counting and elucidate scattering physics.

Main Methods:

  • Calibrated EELS mapping experiments on a DyScO3 single crystal.
  • Simultaneous recording of elastic signals to determine source size, thickness, and mean free path.
  • Double channeling simulations incorporating inelastic and elastic scattering.

Main Results:

  • Accurate reproduction of absolute signals and contrast in Dy-M5 maps using determined source distribution.
  • Identified discrepancies in Sc-L2,3 and Dy-N4,5 maps attributed to background, core-hole effects, and final states.
  • Demonstrated quantitative STEM-EELS feasibility for atom counting at higher energy losses.

Conclusions:

  • Quantitative STEM-EELS is viable for element-specific atom counting, especially at higher energy losses.
  • Accurate simulation requires careful consideration of source distribution and scattering physics.
  • Further theoretical work can improve accuracy by addressing energy-dependent backgrounds and final state effects.