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A 40 Gbit/s optical link on a 300-mm silicon platform.

D Marris-Morini, L Virot, C Baudot

    Optics Express
    |March 26, 2014
    PubMed
    Summary

    We achieved a 40 Gbit/s optical link using silicon modulators and germanium photodetectors. This demonstrates high-speed optoelectronics on a CMOS platform for scalable production.

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    Area of Science:

    • Photonics and optoelectronics
    • Integrated photonics
    • Silicon photonics

    Background:

    • High-speed optical communication requires efficient optoelectronic devices.
    • Integrating silicon photonics with other materials like germanium is crucial for advanced functionalities.
    • Current fabrication methods face challenges in achieving high data rates and scalability.

    Purpose of the Study:

    • To demonstrate a high-speed optical link by integrating silicon and germanium photonic devices.
    • To evaluate the performance and loss contributions of coupled optical modulators and photodetectors.
    • To assess the feasibility of fabricating these devices on a standard CMOS platform for mass production.

    Main Methods:

    • Fabrication of a silicon Mach-Zehnder interferometer optical modulator based on carrier depletion.

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  • Integration of a germanium lateral pin photodetector butt-coupled to a silicon waveguide.
  • Coupling of the silicon modulator and germanium photodetector from separate photonic chips.
  • Characterization of optical link performance, including modulator, propagation, and coupling losses.

    • Main Results:

    • Successful demonstration of a 40 Gbit/s optical link.
    • Optical modulator loss of 4.9 dB and propagation loss below 1 dB/cm.
    • Estimated overall link loss below 18 dB, dominated by coupling losses from grating couplers.
    • Fabrication of both optoelectronic devices on a 300-mm CMOS platform.

    Conclusions:

    • The study successfully demonstrated a high-speed 40 Gbit/s optical link by integrating silicon and germanium photonic devices.
    • The results highlight the potential of CMOS-compatible fabrication for high-volume production of advanced optoelectronic components.
    • Further optimization of coupling mechanisms is needed to reduce overall link losses.