Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

1.1K
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
1.1K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

907
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
907
Biasing of FET01:22

Biasing of FET

1.0K
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
1.0K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Maternal and neonatal predictors of high Edinburgh Postnatal Depression Scale score on postpartum day 7: a retrospective cohort study.

The journal of maternal-fetal & neonatal medicine : the official journal of the European Association of Perinatal Medicine, the Federation of Asia and Oceania Perinatal Societies, the International Society of Perinatal Obstetricians·2026
Same author

Controlling the synchronization and symmetry breaking of coupled bacterial pili on active biofilm carpets.

eLife·2026
Same author

Tapping into Charge Storage with Operando-XPS Using a Multi-Layer Graphene Coplanar Capacitor and an Ionic Liquid Mixture.

Langmuir : the ACS journal of surfaces and colloids·2026
Same author

Diagnostic performance of systemic inflammatory and nutritional indices and their association with clinicopathological features in endometrial cancer: a retrospective study.

BMC women's health·2026
Same author

Psychometric Validation of a Patient-Reported Measure of Pregnancy and Motherhood Experiences in Turkish Women with Physical Disabilities.

International journal of women's health·2026
Same author

Association of umbilical cord blood phthalate levels with neonatal growth parameters in term pregnancies.

BMC pediatrics·2026

Related Experiment Video

Updated: May 1, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

14.7K

Gate-tunable photoemission from graphene transistors.

Mehmet Copuroglu1, Pinar Aydogan, Emre O Polat

  • 1Department of Chemistry and ‡Department of Physics, Bilkent University , Ankara 06800, Turkey.

Nano Letters
|April 2, 2014
PubMed
Summary

We demonstrate gate-tunable X-ray photoelectron emission from graphene transistors. This technique provides chemical insights into layered materials by linking photoemission spectra with local electrical properties.

More Related Videos

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
07:51

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

Published on: February 1, 2022

2.9K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

10.6K

Related Experiment Videos

Last Updated: May 1, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

14.7K
Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
07:51

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

Published on: February 1, 2022

2.9K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

10.6K

Area of Science:

  • Solid State Physics
  • Materials Science
  • Surface Science

Background:

  • Graphene transistors are crucial for advanced electronics.
  • Understanding charge carrier behavior in graphene and interfaces is essential.
  • X-ray photoelectron spectroscopy (XPS) is a powerful surface analysis technique.

Purpose of the Study:

  • To investigate gate-tunable X-ray photoelectron emission from graphene transistors.
  • To explore the influence of electrostatic doping on photoemission from graphene and dielectric substrates.
  • To establish a method for correlating local electrical properties with chemical information.

Main Methods:

  • Fabrication of back-gated graphene transistors.
  • Utilizing X-ray photoelectron emission spectroscopy (XPES).
  • Applying varying gate voltages to electrostatically dope graphene and modify local electric fields.

Main Results:

  • Observed gate-tunable shifts in photoelectron binding energies for both graphene (C 1s) and gate dielectric core electrons.
  • Demonstrated that gate voltage alters graphene's Fermi energy and shifts core electron binding energies.
  • Showcased the ability to extract quantitative electrical information from buried interfaces via potential profiling.

Conclusions:

  • Gate-tunable XPES is a viable technique for probing layered materials.
  • This method offers chemically specific information linked to local electrical properties.
  • Opens new avenues for elucidating the operational mechanisms of graphene-based devices.