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Through thick and thin: tuning the threshold voltage in organic field-effect transistors
Josué F Martínez Hardigree1, Howard E Katz
1Department of Materials Science and Engineering, Johns Hopkins University , Baltimore, Maryland 21218, United States.
Accounts of Chemical Research
|April 2, 2014
Summary
Controlling the threshold voltage (V(T)) in organic field-effect transistors (OFETs) is key for practical applications. This review explores interfacial engineering strategies, including dielectric properties and molecular design, to improve OFET performance and stability.
Area of Science:
- Materials Science
- Organic Electronics
- Semiconductor Physics
Background:
- Organic semiconductors (OSCs) offer unique properties for next-generation electronics like displays and sensors.
- Organic field-effect transistors (OFETs) are crucial components, but suffer from unstable threshold voltage (V(T)) and bias stress.
- Poor V(T) control hinders OFET practicality, necessitating solutions for reliable device operation.
Purpose of the Study:
- To review state-of-the-art methods for tuning OFET performance by manipulating V(T).
- To highlight chemical designs and physical processes impacting interfacial properties.
- To discuss strategies for enhancing V(T) stability and device reliability.
Main Methods:
- Interfacial engineering through chemical modification and physical processes.
- Evaluation of dielectric properties, including thickness and permittivity.
- Application of surface treatments like corona charging, direct biasing, and functional organic monolayers.
Main Results:
- Thinner, higher permittivity dielectrics can reduce V(T) magnitude and variability.
- Surface treatments and molecular design effectively tune V(T) and improve stability.
- Dielectric hydrophobicity and functional monolayers enhance charge stability and device performance.
Conclusions:
- Effective V(T) control is achievable through strategic interfacial engineering.
- Chemical and physical methods offer pathways to overcome OFET instability.
- Further research into device integration and reliability is crucial for widespread OFET adoption.
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