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Updated: May 1, 2026
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Analysis of Contact Interfaces for Single GaN Nanowire Devices
Published on: November 15, 2013
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Structural and chemical evolution of the spontaneous core-shell structures of AlxGa1-xN/GaN nanowires
Rabie Fath Allah1, Teresa Ben1, David González1
1Dpto. Ciencia de los Materiales e Ingeniería Metalúrgica y Q.I.,Facultad de Ciencias,Apdo. 40,11510 Puerto Real,Cádiz,Spain.
Abstract:
A study by electron microscopy techniques of the structural and compositional properties of Al x Ga1-x N/GaN nanowire (NW) heterostructures on Si(111) is presented. Al x Ga1-x N depositions grown without catalyst by plasma-assisted molecular beam epitaxy were designed to form NWs in the range of 0.20
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