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Fabrication of Spatially Confined Complex Oxides
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Fabrication of Spatially Confined Complex Oxides

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Boost up mobility of solution-processed metal oxide thin-film transistors via confining structure on electron

You Seung Rim1, Huajun Chen, Xiaolu Kou

  • 1Department of Materials Science and Engineering, University of California Los Angeles, CA, 90095, USA.

Advanced Materials (Deerfield Beach, Fla.)
|April 18, 2014
PubMed
Abstract

No abstract available in PubMed .

Keywords:
oxide semiconductorsolution-processstructural propertiesthin-film transistor

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