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Updated: Apr 30, 2026

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
Modularized construction of general integrated circuits on individual carbon nanotubes
Tian Pei1, Panpan Zhang, Zhiyong Zhang
1Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University , Beijing 100871, China.
Abstract:
While constructing general integrated circuits (ICs) with field-effect transistors (FETs) built on individual CNTs is among few viable ways to build ICs with small dimension and high performance that can be compared with that of state-of-the-art Si based ICs, this has not been demonstrated owing to the absence of valid and well-tolerant fabrication method. Here we demonstrate a modularized method for constructing general ICs on individual CNTs with different electric properties. A pass-transistor-logic style 8-transistor (8-T) unit is built, demonstrated as a multifunctional function generator with good tolerance to inhomogeneity in the CNTs used and used as a building block for constructing general ICs. As an example, an 8-bits BUS system that is widely used to transfer data between different systems in a computer is constructed. This is the most complicated IC fabricated on individual CNTs to date, containing 46 FETs built on six individual semiconducting CNTs. The 8-T unit provides a good basis for constructing complex ICs to explore the potential and limits of CNT ICs given the current imperfection in available CNT materials and may also be developed into a universal and efficient way for constructing general ICs on ideal CNT materials in the future.

