Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

P-N junction01:11

P-N junction

1.7K
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.7K
Plastic Behavior01:21

Plastic Behavior

810
A material's elastic behavior is characterized by the disappearance of stress once the load is removed, allowing the material to return to its original state. However, when stress surpasses the yield point, yielding commences, marking the onset of plastic deformation or permanent set. This change from elastic to plastic behavior is influenced by the peak stress value and the duration before the load is removed. An intriguing observation occurs when a specimen is loaded, unloaded, and...
810
Biasing of P-N Junction01:16

Biasing of P-N Junction

2.7K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
2.7K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.4K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.4K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Addressing Critical Fungal Pathogens Under a One Health Perspective: Key Insights from the Portuguese Association of Medical Mycology.

Mycopathologia·2025
Same author

Diagonalization without Diagonalization: A Direct Optimization Approach for Solid-State Density Functional Theory.

Journal of chemical theory and computation·2025
Same author

From 2D kaolinite to 3D amorphous cement.

Scientific reports·2025
Same author

Glycemic variability after mechanical thrombectomy for anterior circulation acute ischemic stroke.

Revista de neurologia·2024
Same author

Evidence for electron-hole crystals in a Mott insulator.

Nature materials·2024
Same author

Longitudinal outcomes of obeticholic acid therapy in ursodiol-nonresponsive primary biliary cholangitis: Stratifying the impact of add-on fibrates in real-world practice.

Alimentary pharmacology & therapeutics·2024
Same journal

Erratum: Bacterial Turbulence at Compressible Fluid Interfaces [Phys. Rev. Lett. 136, 138301 (2026)].

Physical review letters·2026
Same journal

Unveiling Light-Quark Yukawa Flavor Structure via Dihadron Fragmentation at Lepton Colliders.

Physical review letters·2026
Same journal

Adaptable Route to Fast Coherent State Transport via Bang-Bang-Bang Protocols.

Physical review letters·2026
Same journal

Topological Transition and Emergence of Elasticity of Dislocation in Skyrmion Lattice: Beyond Kittel's Magnetic-Polar Analogy.

Physical review letters·2026
Same journal

Pound-Drever-Hall Method for Superconducting-Qubit Readout.

Physical review letters·2026
Same journal

Coupling a ^{73}Ge Nuclear Spin to an Electrostatically Defined Quantum Dot in Silicon.

Physical review letters·2026
See all related articles

Related Experiment Video

Updated: Apr 29, 2026

Exfoliation and Analysis of Large-area, Air-Sensitive Two-Dimensional Materials
10:18

Exfoliation and Analysis of Large-area, Air-Sensitive Two-Dimensional Materials

Published on: January 5, 2019

12.5K

Strain-induced gap modification in black phosphorus.

A S Rodin1, A Carvalho2, A H Castro Neto3

  • 1Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215, USA.

Physical Review Letters
|May 20, 2014
PubMed
Summary
This summary is machine-generated.

Strain engineering in black phosphorus can tune its electronic properties. Applying strain normal to the plane alters the band gap, potentially inducing a semiconductor-to-metal transition.

More Related Videos

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.2K
Fabricating Nanogaps by Nanoskiving
07:36

Fabricating Nanogaps by Nanoskiving

Published on: May 13, 2013

10.8K

Related Experiment Videos

Last Updated: Apr 29, 2026

Exfoliation and Analysis of Large-area, Air-Sensitive Two-Dimensional Materials
10:18

Exfoliation and Analysis of Large-area, Air-Sensitive Two-Dimensional Materials

Published on: January 5, 2019

12.5K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.2K
Fabricating Nanogaps by Nanoskiving
07:36

Fabricating Nanogaps by Nanoskiving

Published on: May 13, 2013

10.8K

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Computational Materials Science

Background:

  • Single-layer black phosphorus exhibits unique electronic properties.
  • Understanding strain effects is crucial for its applications.

Purpose of the Study:

  • To predict the band structure of single-layer black phosphorus.
  • To investigate the impact of strain on its electronic properties.

Main Methods:

  • Density Functional Theory (DFT) calculations.
  • Tight-binding models.
  • First-principles analysis of localized orbital composition.

Main Results:

  • Developed an effective low-energy Hamiltonian at the Γ point using system symmetry.
  • Demonstrated that out-of-plane strain can modify the band gap.
  • Showed that strain can induce a semiconductor-to-metal transition.

Conclusions:

  • Strain engineering offers a pathway to control the electronic behavior of black phosphorus.
  • Out-of-plane deformation is a viable method for tuning band gap and phase transitions.