p-i-n Heterojunction solar cells with a colloidal quantum-dot absorber layer
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Developing High Performance GaP/Si Heterojunction Solar Cells
Published on: November 16, 2018
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Dong-Kyun Ko1, Patrick R Brown, Moungi G Bawendi
1Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts, 02139, USA.
Advanced Materials (Deerfield Beach, Fla.)
|May 28, 2014
Abstract:
A quantum-dot (QD) p-i-n heterojunction solar cell with an increased depletion region is demonstrated by depleting the QD layer from both the front and back junctions. Due to a combination of improved charged extraction and increased light absorption, a 120% increase in the short-circuit current is achieved compared with that of conventional ZnO/QD devices.

