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An ultralow power athermal silicon modulator.

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Area of Science:

  • Photonics and Optical Communications
  • Semiconductor Devices
  • High-Performance Computing

Background:

  • Silicon photonics is crucial for low-power optical networks in high-performance computing.
  • Existing components have high power consumption, hindering femtojoule-class communication links.

Purpose of the Study:

  • To demonstrate a modulator with simultaneous high-speed, low-voltage, and energy-efficient operation.
  • To overcome power limitations in silicon photonics for future communication networks.

Main Methods:

  • Development and characterization of a novel vertical p-n junction silicon photonics modulator.
  • Achieved a record electro-optic response of 250 pm/V (30 GHz/V).
  • Demonstrated thermal drift compensation with minimal energy penalty.

Main Results:

  • First modulator achieving 25 Gb/s, 0.5 VPP, and 0.9 fJ/bit error-free operation.
  • Electro-optic response is up to 10 times larger than previous devices.
  • Operated effectively over a 7.5 °C temperature range with total energy consumption below 1.03 fJ/bit.

Conclusions:

  • The developed modulator represents a new paradigm in modulator design.
  • Achieved highly efficient modulation and electro-optic thermal compensation.
  • A significant advancement towards single-digit femtojoule-class optical communications.