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Monolithic silicon waveguide photodiode utilizing surface-state absorption and operating at 10 Gb/s.

Jason J Ackert, Abdullah S Karar, John C Cartledge

    Optics Express
    |June 13, 2014
    PubMed
    Summary

    We developed a new silicon infrared detector integrated into a waveguide. This device operates at 10 Gb/s, demonstrating potential for high-speed optical communication systems.

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    Area of Science:

    • Photonics and Optoelectronics
    • Semiconductor Devices
    • Integrated Optics

    Background:

    • Silicon photonics is crucial for optical communication.
    • Efficient infrared detectors are needed for integrated photonic circuits.
    • Surface-state absorption in silicon waveguides presents a detection mechanism.

    Purpose of the Study:

    • To fabricate a waveguide-integrated monolithic silicon infrared detector.
    • To investigate the performance of a p-i-n photodiode in a silicon-on-insulator (SOI) rib waveguide.
    • To assess the detector's response and operational speed.

    Main Methods:

    • Fabrication of a p-i-n junction within an SOI rib waveguide.
    • Utilizing surface-state absorption at the silicon/air interface for photodetection.
    • Characterization of the detector's responsivity and high-speed performance.

    Main Results:

    • A 2 mm long waveguide-integrated silicon detector was successfully fabricated.
    • The detector exhibits a responsivity of 0.045 A/W (as a function of coupled light).
    • The device operates at 10 Gb/s with a reverse bias voltage of 2 V.

    Conclusions:

    • Waveguide-integrated silicon photodiodes can be fabricated using surface-state absorption.
    • The developed detector shows promising performance for high-speed integrated photonic applications.
    • This technology offers a pathway for cost-effective silicon-based optical detection.