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Atomically precise interfaces from non-stoichiometric deposition
11] Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA [2] Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA [3].
Nature Communications
|August 5, 2014
Summary
Precise control of complex oxide heterostructures is achieved through non-stoichiometric growth conditions. This method enables the synthesis of the entire Ruddlesden-Popper homologous series, expanding possibilities for novel quantum phenomena.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Solid State Chemistry
Background:
- Complex oxide heterostructures offer atomically precise interfaces crucial for emergent properties.
- Atomically precise interfaces are typically assumed to result from stoichiometric growth conditions.
Purpose of the Study:
- To investigate the role of growth conditions in achieving precise interface control in complex oxide heterostructures.
- To demonstrate a method for the precise epitaxial growth of Sr(n+1)Ti(n)O(n+1) Ruddlesden-Popper phases.
Main Methods:
- Utilized deliberate and specific non-stoichiometric growth conditions.
- Employed strontium-rich surface layer deposition during the growth of Sr(n+1)Ti(n)O(n+1) phases.
Main Results:
- Stoichiometric deposition of Sr(n+1)Ti(n)O(n+1) phases resulted in the loss of the first Ruddlesden-Popper rock-salt double layer.
- Growing with a strontium-rich surface layer successfully restored bulk stoichiometry and ordering of the subsurface Ruddlesden-Popper structure.
- Expanded the range of synthesizable materials to the entire Ruddlesden-Popper homologous series, not just perovskites.
Conclusions:
- Non-stoichiometric growth conditions provide superior control over interface precision in complex oxide heterostructures.
- This approach enables the exploration of novel quantum phenomena across a wider range of oxide interfaces, including the entire Ruddlesden-Popper series.
