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Oxygen etching of thick MoS2 films
Robert Ionescu1, Aaron George, Isaac Ruiz
1Department of Chemistry, University of California, Riverside, CA 92521, USA.
Chemical Communications (Cambridge, England)
|August 14, 2014
Summary
Oxygen annealing of thick molybdenum disulfide (MoS2) films creates controllable triangular etched pits. Etching patterns vary based on defect sites, influencing morphology across different sample thicknesses.
Area of Science:
- Materials Science
- Surface Science
- Thin Film Technology
Background:
- Molybdenum disulfide (MoS2) is a crucial material in 2D electronics and catalysis.
- Controlling surface morphology is vital for optimizing MoS2 device performance.
- Understanding etching mechanisms in MoS2 is essential for fabrication.
Purpose of the Study:
- To investigate the effects of oxygen annealing on the etching behavior of thick MoS2 films.
- To characterize the resulting etched morphologies and their relationship with defect sites.
- To explore the controllability of etching angles and feature formation.
Main Methods:
- Oxygen annealing of thick MoS2 films.
- Microscopic analysis of etched surfaces to identify morphologies.
- Correlation of etching patterns with basal plane defect sites.
- Examination of samples with varying bulk thicknesses.
Main Results:
- Randomly oriented, controllable triangular etched shapes were formed.
- Uniform etching angles were observed in the formed pits.
- Etching morphologies showed variations across the sample, linked to defect sites.
- Numerous features were observed, influenced by bulk sample thicknesses.
Conclusions:
- Oxygen annealing provides a method for controlled etching of MoS2 films.
- Defect sites on the basal plane significantly influence etching morphology.
- The process allows for the formation of specific microstructures in MoS2.
