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An ionizing radiation sensor using a pre-programmed MAHAOS device
Wen-Ching Hsieh1, Hao-Tien Daniel Lee2, Fuh-Cheng Jong3
1Department of Opto-Electronic System Engineering, Minghsin University of Science and Technology, Xinxing Rd, 1, Xinfeng 30401, Taiwan. wchsieh@must.edu.tw.
Sensors (Basel, Switzerland)
|August 14, 2014
Summary
Metal-aluminum oxide-hafnium aluminum oxide-silicon oxide-silicon (MAHAOS) devices show promise for ionizing radiation sensing. Pre-programmed MAHAOS devices exhibit significant, stable responses to gamma radiation, indicating potential for non-volatile radiation detection.
Area of Science:
- Semiconductor device physics
- Radiation detection technology
- Materials science for electronic devices
Background:
- Metal-aluminum oxide-hafnium aluminum oxide-silicon oxide-silicon (MAHAOS) devices, a type of SONOS-like structure with high-k gate dielectrics, are explored for ionizing radiation sensing.
- Existing radiation sensors may have limitations in non-volatility or sensitivity.
Purpose of the Study:
- To characterize the ionizing radiation sensing response of MAHAOS devices for the first time.
- To evaluate the performance of both pre-programmed and virgin MAHAOS devices under gamma radiation exposure.
- To assess the potential of these devices for non-volatile radiation sensing applications.
Main Methods:
- Fabrication and characterization of MAHAOS devices with high-k stack gate dielectrics.
- Exposure of devices to varying total ionization doses (TID) of gamma radiation.
- Measurement of threshold voltage (V(T)) shifts as a function of radiation dose.
- Evaluation of data retention stability for irradiated, pre-programmed devices.
Main Results:
- A strong correlation was observed between the change in threshold voltage (V(T)) and the total ionization dose (TID) of gamma radiation up to at least 5 Mrad TID.
- Pre-programmed MAHAOS devices demonstrated a highly significant change in V(T) upon gamma irradiation.
- Irradiated pre-programmed MAHAOS devices (written by 5 Mrad TID) showed stable data storage over extended periods.
Conclusions:
- MAHAOS devices are viable candidates for ionizing radiation sensor applications.
- Pre-programmed MAHAOS devices offer a significant and stable response to gamma radiation.
- These findings highlight the potential of MAHAOS devices for future non-volatile ionizing radiation sensing technologies.
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