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Interface recombination current in type II heterostructure bipolar diodes
Marius Grundmann1, Robert Karsthof, Holger von Wenckstern
1Institut für Experimentelle Physik II, Universität Leipzig , Linnéstrasse 5, 04103 Leipzig, Germany.
ACS Applied Materials & Interfaces
|August 20, 2014
Summary
Wide-gap semiconductors form efficient type II bipolar heterostructures. Diodes exhibit extremely high rectification (>10^10), driven by interface recombination, with an ideality factor near 2.
Area of Science:
- Materials Science
- Semiconductor Physics
Background:
- Wide-gap semiconductors are typically unipolar.
- They can form type II bipolar heterostructures with significant band offsets.
Purpose of the Study:
- To present and analyze diodes based on type II bipolar heterostructures.
- To investigate the rectification properties and current transport mechanisms.
Main Methods:
- Fabrication of NiO/ZnO and CuI/ZnO type II diodes.
- Derivation of the ideality factor for symmetric and asymmetric diodes.
- Analysis of current transport dominated by interface recombination.
Main Results:
- Achieved very high rectification ratios exceeding 1 × 10^10.
- Derived an ideality factor close to 2, consistent with experimental data.
- Found interface recombination rates significantly lower than theoretically possible maximums.
Conclusions:
- Type II bipolar heterostructures enable ultra-high rectification in diodes.
- Interface recombination is the dominant current mechanism.
- Experimental interface recombination is less efficient than predicted, suggesting potential for further optimization.
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