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Updated: Apr 25, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Spin-pump-induced spin transport in p-type Si at room temperature
Eiji Shikoh1, Kazuya Ando2, Kazuki Kubo1
1Graduate School of Engineering Science, Osaka University, Toyonaka 560-8531, Japan.
Abstract:
A spin battery concept is applied for the dynamical generation of pure spin current and spin transport in p-type silicon (p-Si). Ferromagnetic resonance and effective s-d coupling in Ni(80)Fe(20) results in spin accumulation at the Ni(80)Fe(20)/p-Si interface, inducing spin injection and the generation of spin current in the p-Si. The pure spin current is converted to a charge current by the inverse spin Hall effect of Pd evaporated onto the p-Si. This approach demonstrates the generation and transport of pure spin current in p-Si at room temperature.
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