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Updated: Apr 25, 2026

Sputter Growth and Characterization of Metamagnetic B2-ordered FeRh Epilayers

Sputter Growth and Characterization of Metamagnetic B2-ordered FeRh Epilayers

Published on: October 5, 2013

Room-temperature multiferroic hexagonal LuFeO3 films.

Wenbin Wang¹, Jun Zhao², Wenbo Wang³

¹Department of Physics, University of Tennessee, Knoxville, Tennessee 37996, USA and Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA.

Physical Review Letters

|August 29, 2014

Summary

This summary is machine-generated.

Single-crystalline hexagonal LuFeO(3) films exhibit ferroelectricity switchable at room temperature. These multiferroic films show coexisting polar, antiferromagnetic, and weak ferromagnetic orders.

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Last Updated: Apr 25, 2026

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Published on: October 5, 2013

High-resolution Thermal Micro-imaging Using Europium Chelate Luminescent Coatings

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Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

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Area of Science:

Materials Science
Condensed Matter Physics
Solid State Chemistry

Background:

Hexagonal LuFeO(3) is a material with potential for multiferroic applications.
Understanding its crystal and magnetic structures is crucial for device development.

Purpose of the Study:

To investigate the crystal and magnetic structures of single-crystalline hexagonal LuFeO(3) films.
To determine the ferroelectric and magnetic ordering temperatures and behaviors.
To confirm the presence of multiferroic properties at room temperature.

Main Methods:

X-ray diffraction
Electron diffraction
Neutron diffraction

Main Results:

The polar structure persists up to 1050 K.
Switchable polar behavior indicating ferroelectricity was observed at room temperature.
Antiferromagnetic order occurred below 440 K, with spin reorientation to weak ferromagnetic order below 130 K.

Conclusions:

Hexagonal LuFeO(3) films exhibit ferroelectricity and multiple magnetic orders.
These films are confirmed as room-temperature multiferroics.
The findings open avenues for novel electronic device applications.