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Updated: Apr 24, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Controlling spin relaxation in hexagonal BN-encapsulated graphene with a transverse electric field
M H D Guimarães1, P J Zomer1, J Ingla-Aynés1
1Physics of Nanodevices, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG, Groningen, The Netherlands.
Abstract:
We experimentally study the electronic spin transport in hexagonal BN encapsulated single layer graphene nonlocal spin valves. The use of top and bottom gates allows us to control the carrier density and the electric field independently. The spin relaxation times in our devices range up to 2 ns with spin relaxation lengths exceeding 12 μm even at room temperature. We obtain that the ratio of the spin relaxation time for spins pointing out-of-plane to spins in-plane is τ(⊥)/τ(||) ≈ 0.75 for zero applied perpendicular electric field. By tuning the electric field, this anisotropy changes to ≈ 0.65 at 0.7 V/nm, in agreement with an electric field tunable in-plane Rashba spin-orbit coupling.
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