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High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers

Ya-Ju Lee1, Yung-Chi Yao1, Chun-Ying Huang2

  • 1Institute of Electro-Optical Science and Technology, National Taiwan Normal University, 88, Sec. 4, Ting-Chou Road, Taipei 116, Taiwan.

Nanoscale Research Letters
|September 11, 2014
PubMed

Keywords:
2-DEGAlGaN/GaN HEMTBreakdown voltage

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