High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers.

Area of Science:

• Materials Science
• Semiconductor Physics
• Electrical Engineering

Background:

• AlGaN/GaN high-electron-mobility transistors (HEMTs) are crucial for power electronics.
• Enhancing breakdown voltage is key to improving HEMT performance and reliability.
• Electron leakage and confinement are critical factors affecting HEMT operation.

Purpose of the Study:

• To numerically investigate the enhancement of breakdown voltage in AlGaN/GaN HEMTs.
• To evaluate the impact of an AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) on HEMT performance.
• To analyze the influence of QW EBL thickness and composition on device breakdown.

Main Methods:

• Numerical simulation of AlGaN/GaN HEMTs.
• Implementation of an AlGaN/GaN/AlGaN QW EBL structure.
• Analysis of two-dimensional electron gas (2-DEG) confinement and electron leakage.

Main Results:

• The QW EBL significantly improves the breakdown voltage of AlGaN/GaN HEMTs.
• Superior confinement of 2-DEGs by the QW EBL was observed.
• Remarkable suppression of electron spilling and enhancement of electron mobility were achieved.
• Dependence of breakdown voltage on QW EBL thickness and composition was quantified.

Conclusions:

• The AlGaN/GaN/AlGaN QW EBL is an effective strategy for enhancing HEMT breakdown voltage.
• Improved electron confinement and reduced leakage are key mechanisms for performance improvement.
• Optimizing QW EBL parameters can further enhance device performance for power applications.