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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

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Charge offset stability in Si single electron devices with Al gates.

Neil M Zimmerman¹, Chih-Hwan Yang, Nai Shyan Lai

¹National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.

|September 13, 2014

Summary

We studied charge offset drift in silicon single electron devices with aluminum gates. Aluminum oxide defects appear to cause instability, with drift values between silicon-gated and tunnel junction devices.

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Area of Science:

Solid State Physics
Quantum Computing Hardware

Background:

Single electron devices (SEDs) are crucial for quantum computing and metrology.
Understanding charge offset drift is essential for device stability and performance.

Purpose of the Study:

To investigate the time stability of silicon single electron devices (SEDs) utilizing aluminum (Al) gates.
To determine the primary source of charge offset drift in these devices.

Main Methods:

Fabrication and characterization of Si SEDs with Al gates.
Measurement and analysis of charge offset drift over time.

Main Results:

Si SEDs with Al gates exhibit a charge offset drift of 0.15 e.
This drift is less than Al/AlOx/Al tunnel junctions (>1 e) but greater than Si-gated Si SEDs (0.01 e).

Conclusions:

The observed charge offset drift suggests that defects within the aluminum oxide (AlOx) layer are the main contributors to instability in Al-gated Si SEDs.