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Improvement in the breakdown endurance of high-κ dielectric by utilizing stacking technology and adding sufficient

Chin-Sheng Pang1, Jenn-Gwo Hwu1

  • 1Department of Electrical Engineering and the Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan.

Nanoscale Research Letters
|September 24, 2014
PubMed

Keywords:
HfO2/SiO2Interface trap densityInterfacial layerMOSNitric acid oxidationStacking structureTime-zero dielectric breakdown

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