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Self-rectifying performance in the sandwiched structure of Ag/In-Ga-Zn-O/Pt bipolar resistive switching memory

Xiaobing Yan1, Hua Hao2, Yingfang Chen2

  • 1College of Electron and Information Engineering, Hebei University, Baoding 071002, People's Republic of China ; The Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, People's Republic of China.

Nanoscale Research Letters
|October 9, 2014
PubMed

Keywords:
Resistive switchingSchottky barrierSelf-rectifying

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