Direct observation of depth-dependent atomic displacements associated with dislocations in gallium nitride
J G Lozano1, H Yang1, M P Guerrero-Lebrero2
1Department of Materials, University of Oxford, OX1 3PH Oxford, United Kingdom.
Physical Review Letters
|October 11, 2014
Abstract:
We demonstrate that the aberration-corrected scanning transmission electron microscope has a sufficiently small depth of field to observe depth-dependent atomic displacements in a crystal. The depth-dependent displacements associated with the Eshelby twist of dislocations in GaN normal to the foil with a screw component of the Burgers vector are directly imaged. We show that these displacements are observed as a rotation of the lattice between images taken in a focal series. From the sense of the rotation, the sign of the screw component can be determined.


