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Single CdTe microwire photodetectors grown by close-spaced sublimation method
Optics Express
|October 17, 2014
Summary
Single cadmium telluride (CdTe) microwire field-effect transistors (FETs) show high sensitivity to ultraviolet (UV) light. These CdTe microwire FETs are promising for advanced micro-optoelectronic device applications.
Area of Science:
- Materials Science
- Nanotechnology
- Solid State Physics
Background:
- Field-effect transistors (FETs) are fundamental semiconductor devices.
- Microwire-based electronics offer unique properties for miniaturization.
- Cadmium telluride (CdTe) is a semiconductor material with potential in optoelectronics.
Purpose of the Study:
- To demonstrate CdTe microwire FETs with high UV light sensitivity.
- To investigate the structural, morphological, transport, and optoelectronic properties of CdTe microwires.
- To explore the potential of these devices as photodetectors.
Main Methods:
- Catalytic growth of dense CdTe microwires using close-spaced sublimation.
- Fabrication of single CdTe microwire field-effect transistors (FETs).
- Systematic investigation of structural, morphological, transport, and optoelectronic properties.
- Characterization of device performance under dark and UV-illumination conditions.
Main Results:
- CdTe microwire FETs exhibit p-type semiconductor behavior.
- Field-effect mobilities up to 1.1 × 10(-3) cm2 V(-1) s(-1) were achieved.
- Photoresponse was observed to be highly dependent on back-gate bias conditions under UV illumination.
Conclusions:
- Single CdTe microwire FETs demonstrate high sensitivity to UV light.
- The developed CdTe microwire FETs show promise for high-performance micro-optoelectronic applications.
- Gate-bias-dependent photoresponse offers tunability for photodetector applications.
